(China (Mainland))
Product Summary
The L6386D013TR is a high-voltage high and low side driver. It is manufactured with the BCD "OFF-LINE" technology. The L6386D013TR has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
Parametrics
L6386D013TR absolute maximum ratings: (1)Vout Output Voltage: -3 to Vboot - 18V; (2)Vcc Supply Voltage: - 0.3 to +18V; (3)Vboot Floating Supply Voltage: -1 to 618V; (4)Vhvg Upper Gate Output Voltage: - 1 to Vboot V; (5)Vlvg Lower Gate Output Voltage: -0.3 to Vcc +0.3V; (6)Vi Logic Input Voltage: -0.3 to Vcc +0.3V; (7)Vdiag Open Drain Forced Voltage: -0.3 to Vcc +0.3V; (8)Vcin Comparator Input Voltage: -0.3 to Vcc +0.3V; (9)dVout/dt Allowed Output Slew Rate: 50V/ns; (10)Ptot Total Power Dissipation (Tj = 85℃): 750mW; (11)Tj Junction Temperature: 150℃; (12)Ts Storage Temperature: -50℃ to 150℃.
Features
L6386D013TR features: (1)high voltage rail up to 600V; (2)dV/dt immunity +- 50 V/nsec in full temperature range; (3)driver current capability: 400mA source, 650mA sink; (4)switching times 50/30nsec RISE/FALL with 1nF load; (5)CMOS/TTL schmitt trigger inputs with hysteresis and pull down; (6)under voltage lock out on lower and upper driving section; (7)integrated bootstrap diode; (8)outputs in phase with inputs.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 L6386D013TR |
STMicroelectronics |
Power Driver ICs Hi-Volt Hi-Low Side |
Data Sheet |
Negotiable |
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L6384D013TR |
STMicroelectronics |
Power Driver ICs Hi-Volt Half Bridge |
Data Sheet |
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