(China (Mainland))
Product Summary
The K4S641632N-LC60 is a 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions is possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4S641632N-LC60 to be useful for a variety of high bandwidth, high performance memory system applications.
Parametrics
K4S641632N-LC60 absolute maximum ratings: (1)Voltage on any pin relative to Vss: -1.0V to 4.6V; (2)Voltage on VDD supply relative to Vss: -1.0V to 4.6V; (3)Storage temperature: -55℃ to +150℃; (4)Power dissipation: 1W; (5) Short circuit current: 50mA.
Features
K4S641632N-LC60 features:(1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)All inputs are sampled at the positive going edge of the system clock; (5)Burst read single-bit write operation; (6)DQM (x8) & L(U)DQM (x16) for masking; (7)Auto & self refresh; (8)64ms refresh period (4K cycle); (9)Pb-free and Halogen-free Package; (10)RoHS compliant; (11)Support Industrial Temp (-40 to 85℃).
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