(China (Mainland))
Product Summary
The MB81C79A-35 is a 262, 144 words ×1 bit static random access memory fabricated with a CMOS technology. The MB81C79A-35 uses NMOS cells and CMOS peripherals and has 300 mil plastic DIP and SOJ packages. it usefully static circuitry throughout and therefore, requires no clocks or refreshes to operate. The MB81C79A-35 is designed for memory applications where high performance, low cost, large bit storage, and simple interfacing are required. It is compatible with TTL logic and requires a single +5V supply.
Parametrics
MB81C79A-35 absolute maximum ratings: (1)Supply Voltage VCC: -0.5V to +7V; (2)Input Voltage on any pin with respect to GND: -3.0V to +7V; (3)Output Voltage on any pin with repect to GND: -0.5V to +7V; (4)Output Current: ±20mA; (5)Power Dissipation: 1.0W; (6)Temperature Under Bias: -10℃ to +85℃; (7)Storage Temperature Range: -45℃ to +125℃.
Features
MB81C79A-35 features: (1) Organization: 262,144 word ×1 bit; (2)Static operation: no clocks or refresh required; (3)Single +5V Power supply ±10% tolerance with low current drain; (4)Separate data inputs and outputs; (5)TTL compatible inputs and outputs; (6)chip selected for simplified memory expansion, automatic power down; (7)Electronic protection for all inputs and outputs; (8)Standard 24-pin Plastic Packages.
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